Novel technique for electrical activation of implanted material without co-implantation

Researchers at the Naval Research Laboratory in Washington, USA, have implanted Mg in GaN and employed a novel high-temperature annealing technique that has realised electrical activation of implanted material for the first time without co-implantation, and demonstrated an increase in the activation ratios for in situ Mg-doped GaN from around 1% to a record 10%.