(Phys.org) —Scientists at the U.S. Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet light-emitting diodes based on GaInN/GaN, AlGaN/GaN, and AlInN/GaN quantum wells. Their approach could enable advances in solid state lighting and the creation of low threshold lasers and high power light emitting diodes (LEDs). Their research is published in the January 25 and November 26, 2013 issues of Applied Physics Letters.
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