A new material has the potential to improve the sensitivity of photographic image sensors by a factor of five. In 2011, an EPFL team led by Andras Kis discovered the amazing semi-conducting properties of molybdenite (MoS2), and they have been exploring its potential in various technological applications ever since. This promising candidate for replacing silicon has now been integrated in a prototype of an image sensor. This sensor, described in an article appearing in Nature Nanotechnology, has five times the light sensitivity of current technology.
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